Single-photon avalanche diodes in 018-μm high-voltage CMOS technology
نویسندگان
چکیده
منابع مشابه
Neural Imaging Using Single-Photon Avalanche Diodes
Introduction: This paper analyses the ability of single-photon avalanche diodes (SPADs) for neural imaging. The current trend in the production of SPADs moves toward the minimumdark count rate (DCR) and maximum photon detection probability (PDP). Moreover, the jitter response which is the main measurement characteristic for the timing uncertainty is progressing. Methods: The neural imaging pro...
متن کاملTwo-dimensional photo-mapping on CMOS single-photon avalanche diodes.
Two-dimensional (2-D) photo-count mapping on CMOS single photon avalanche diodes (SPADs) has been demonstrated. Together with the varied incident wavelengths, the depth-dependent electric field distribution in active region has been investigated on two SPADs with different structures. Clear but different non-uniformity of photo-response have been observed for the two studied devices. With the h...
متن کاملCharacterization of Single-Photon Avalanche Diodes in Standard 140-nm SOI CMOS Technology
We report on the characterization of single-photon avalanche diodes (SPADs) fabricated in standard 140-nm silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. As a methodology for SPAD optimization, a test structure array, called SPAD farm, was realized with several junctions, guard-ring structures, dimensions, etc. In this paper, characterization results of the...
متن کاملArrays of Single Photon Avalanche Diodes in CMOS Technology: Picosecond Timing Resolution for Range Imaging (INVITED)
A solid-state imager fabricated in CMOS technology is presented for depth information capture of arbitrary 3D objects with millimeter resolution. The system is based on an array of 32x32 pixels that independently measure the time-of-flight of a ray of light as it is reflected back from the objects in a scene. A single cone of pulsed laser light illuminates the scene, thus no complex mechanical ...
متن کاملHigh-performance Single Photon Avalanche Diodes for QKD Networks
We describe recent results for the performance and modeling of InP-based single photon avalanche diodes designed for use at 1.5 μm. Dark count probabilities (DCP) as low as 5 x 10 per ns have been achieved at 215 K for a photon detection efficiency (PDE) of 10%, and DCP ~ 1 x 10 per ns has been obtained for PDE as high as 25%. We also report the dependence of afterpulsing on repetition rates up...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Optics Express
سال: 2017
ISSN: 1094-4087
DOI: 10.1364/oe.25.013333